| PART |
Description |
Maker |
| 3296-2900 |
KR Electronics part number 3296-2900 is a 2900 MHz highpass filter
|
KR Electronics, Inc.
|
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| DCR1475SY30 DCR1475SY DCR1475SY25 DCR1475SY26 DCR1 |
Phase Control Thyristor 4406 A, 2900 V, SCR
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| AR904S29 AR904 |
2900 V, 1230 A, 10.1 kA rectifier diode
ER 2C 2#4 SKT RECP
|
POSEICO[Power Semiconductors]
POSEICO SPA
|
| CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| 2729-170 |
170 Watts, 38 Volts, 100 10% Radar 2700-2900 MHz
|
Microsemi Corporation
|
| 2729-125 |
125 Watts, 36 Volts, 100us, 10% Radar 2700-2900 MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HMC719LP4 HMC719LP4E |
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| NTHD5902T1 NTHD5902T1-D |
Power MOSFET Dual N-Channel ChipFET 2.9 Amps, 30 Volts
Power MOSFET Dual N-Channel ChipFET TM(双N沟道ChipFET TM功率MOSFET) 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| WS57C49C WS57C49C-25D WS57C49C-25J WS57C49C-25S WS |
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
CURRENT LIMITER INRSH 33 OHM 20%
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:2.5R; Tolerance, resistance: /-20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
CURRENT LIMITR INRSH 4.7 OHM 20%
CURRENT LIMITR INRSH 2.5 OHM 20% 高K的8的CMOS胎膜早破/ RPROM
HIGH SPEED 8K x 8 CMOS PROM/RPROM 高K的8的CMOS胎膜早破/ RPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
